BDW83C is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
BDW83C | NPN power Darlington transistor |
SavantIC |
BDW83C | SILICON POWER TRANSISTOR |
Bourns |
BDW83C | NPN SILICON POWER DARLINGTONS |
Comset Semiconductors |
BDW83C | NPN SILICON POWER DARLINGTONS |
|
SavantIC |
BDW83 | SILICON POWER TRANSISTOR |
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW83C TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB=0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 12mA 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A;.
