| Part number | BDW83C |
|---|---|
| Datasheet | BDW83C-INCHANGE.pdf |
| File Size | 213.93 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW83C TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB=0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 12mA 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BDW83C | NPN power Darlington transistor | STMicroelectronics |
 |
BDW83C | SILICON POWER TRANSISTOR | SavantIC |
 |
BDW83C | NPN SILICON POWER DARLINGTONS | Bourns |
 |
BDW83C | NPN SILICON POWER DARLINGTONS | Comset Semiconductors |
|
BDW83 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BDW83 | NPN Transistor |
| BDW83A | NPN Transistor |
| BDW83B | NPN Transistor |
| BDW83D | NPN Transistor |
| BDW84 | PNP Transistor |
| BDW84A | PNP Transistor |
| BDW84B | PNP Transistor |
| BDW84C | PNP Transistor |
| BDW84D | PNP Transistor |
| BDW10 | NPN Transistor |
