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BDW83C Datasheet

Manufacturer: Inchange Semiconductor
BDW83C datasheet preview

BDW83C Details

Part number BDW83C
Datasheet BDW83C Datasheet PDF (Download)
File Size 213.93 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
BDW83C page 2

BDW83C Overview

1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW83C TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB=0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 12mA 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A;.

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