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BDX53C - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min) High DC Current Gain : hFE= 750(Min) @IC= 3A Low Collector Saturation Voltage : VCE(sat) = 2.0 V (Max) @ IC = 3.0 A Complement to Type BDX54C Minimum Lot-to-Lot variations for robust device performance and reliable

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDX53C DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage : VCE(sat) = 2.0 V (Max) @ IC = 3.0 A ·Complement to Type BDX54C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications.
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