Datasheet Summary
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 100V(Min)
- High DC Current Gain
: hFE= 750(Min) @IC= 3A
- Low Collector Saturation Voltage
: VCE(sat) = 2.0 V (Max) @ IC = 3.0 A
- plement to Type BDX54C
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general-purpose amplifier and low-speed switching...
