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BU104D Datasheet Preview

BU104D Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max.)@ IC= 7A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in horizontal deflection output stages
of TV’s and CRT’s.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEX
VCEO
VEBO
IC
ICM
IB
PC
TJ
Collector-Base Voltage
Collector-Emitter Voltage VBE= -5V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak Repetitive
Base Current-Continuous
Collector Power Dissipation
@ TC= 25
Junction Temperature
400
V
400
V
150
V
6
V
7
A
15
A
3
A
85
W
150
Tstg
Storage Temperature Range
-65~150
BU104D
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BU104D Datasheet Preview

BU104D Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 7A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 250V; IE= 0
ICEX
Collector Cutoff Current
VCE= 400V; VBE= -5V
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 5A; VCE= 1.75V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
BU104D
MIN TYP. MAX UNIT
150
V
2.5
V
2.5
V
0.5 mA
1.0 mA
400 mA
7
50
10
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU104D
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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