BU104D Datasheet | Inchange Semiconductor

DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) - Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@ IC= 7A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use in horizontal deflection output stages of TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEX VCEO VEBO IC ICM IB PC TJ Collector-Base Voltage Collector-Emitter Voltage VBE= -5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Repetitive Base Current-Continuous Collector Power Dissipation @ TC= 25℃ Junction Temperature ℃ Tstg Storage Temperature Range -65~150 ℃ BU104D isc website：.iscsemi. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50m A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1A ICBO Collector Cutoff Current VCB= 250V; IE= 0 ICEX Collector Cutoff Current VCE= 400V; VBE=...