BU104D - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@ IC= 7A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of

INCHANGE

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Datasheet Details

Part number	BU104D
Manufacturer	INCHANGE
File Size	199.83 KB
Description	NPN Transistor
Datasheet	BU104D Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s.

Published: Sep 7, 2020 |