Datasheet Details
| Part number | BUP52 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.52 KB |
| Description | NPN Transistor |
| Datasheet | BUP52-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUP52 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.52 KB |
| Description | NPN Transistor |
| Datasheet | BUP52-INCHANGE.pdf |
|
|
|
·High DC Current Gain- : hFE>20@IC= 20A ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ideally suited for Motor Control, Switching and Linear Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 70 A ICM Peak collector current 90 A PC Collector Power Dissipation@TC=25℃ 300 W TJ Junction Temperature -55~200 ℃ Tstg Storage Temperature Range -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.58 UNIT ℃/W BUP52 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUP52 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Voltage Breakdown IC=10mA;
IB=0 IC=20A;
IB=2A MIN TYP MAX UNIT 200 V 0.5 VCE(sat) Collector-Emitter Saturation Voltage IC=40A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUP52 | SILICON MULTI-EPITAXIAL NPN TRANSISTOR | TT |
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