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BUZ30AH - N-Channel MOSFET

Key Features

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  • Static drain-source on-resistance: RDS(on) ≤130mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor BUZ30AH，IBUZ30AH ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤130mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current,high speed switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 21 IDM Drain Current-Single Pulsed 84 PD Total Dissipation @TC=25℃ 125 Tj Max.