| Part Number | BUZ30AH |
|---|---|
| Manufacturer | Infineon |
| Overview | SIPMOS ® Power Transistor BUZ 30A H • N channel • Enhancement mode • Avalanche-rated . Halogen-free according to IEC61249-2--21 Pin 1 G Pin 2 D Pin 3 S Type BUZ 30A H VDS 200 V ID 21 A RDS(o. specified Parameter Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS. |
BUZ30AH Datasheet
The BUZ30AH is a Power Transistor.
| Part Number | BUZ30AH |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
BUZ30AH，IBUZ30AH
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤130mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot varia.
*Static drain-source on-resistance: RDS(on) ≤130mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High current,high speed switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER . |