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IPI65R380C6 - N-Channel MOSFET

Description

Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 10.6 A IDM Drain Current-Single Pul

Features

  • Static drain-source on-resistance: RDS(on) ≤0.38Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number IPI65R380C6
Manufacturer INCHANGE
File Size 282.57 KB
Description N-Channel MOSFET
Datasheet download datasheet IPI65R380C6 Datasheet
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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 10.6 A IDM Drain Current-Single Pulsed 29 A PD Total Dissipation @TC=25℃ 83 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1.
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