IPP65R660CFD datasheet, mosfet equivalent, INCHANGE

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IPP65R660CFD Features and benefits

*Static drain-source on-resistance: RDS(on) ≤0.66Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for r.

IPP65R660CFD Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .

IPP65R660CFD Description

*Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain.

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