Key Features
- Low drain-source on-resistance: RDS(on) ≤2.8mΩ
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- reliable device for use in a wide variety of applications
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
IRF3707PBF
|
International Rectifier |
HEXFET Power MOSFET |
|
IRF3709ZL
|
International Rectifier |
HEXFET Power MOSFET |
|
IRF3704PbF
|
International Rectifier |
SMPS MOSFET |
|
IRF3706SPbF
|
International Rectifier |
SMPS MOSFET |
|
IRF3709ZCS
|
VBsemi |
N-Channel MOSFET |