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IRF3709ZS - N-Channel MOSFET

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Description

Static drain-source on-resistance: RDS(on) ≤6.3mΩ@VGS= 10V Drain Source Voltage : VDSS= 30V(Min) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation

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High Frequency Synchronous Buck Converters for Com

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Datasheet Details

Part number IRF3709ZS
Manufacturer INCHANGE
File Size 243.18 KB
Description N-Channel MOSFET
Datasheet download datasheet IRF3709ZS Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IRF3709ZS ·DESCRIPTION ·Static drain-source on-resistance: RDS(on) ≤6.3mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·High Frequency Synchronous Buck Converters for Computer Processor Power. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 30 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous 87 A ID(puls) Pulse Drain Current 350 A Ptot Total Dissipation 79 W Tj Max.
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