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IRF520 Datasheet Preview

IRF520 Datasheet

N-Channel MOSFET

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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF520
·FEATURES
·Typical RDS(on) =0.27Ω
·Avalanche Rugged Technology
·High Current Capability
·Low Gate Charge
·175Operating Temperature
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High Current ,High Speed Switching
·DC-DC&DC-AC Converters
·Motor Control ,Audio Amplifiers
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
10
A
IDM
Drain Current-Single Plused
40
A
PD
Total Dissipation @TC=25
70
W
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-65~175
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.14 /W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

IRF520 Datasheet Preview

IRF520 Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF520
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 5A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 100V; VGS=0
VSD
Forward On-Voltage
IS= 10A; VGS=0
MIN MAX UNIT
100
V
2
4
V
0.27
Ω
±100 nA
250
uA
1.6
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number IRF520
Description N-Channel MOSFET
Maker INCHANGE
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