Datasheet4U Logo Datasheet4U.com

IRF5305 - P-Channel MOSFET

Description

design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source

Features

  • Static drain-source on-resistance: RDS(on)≤0.06Ω.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

  • IRF5305 - Power MOSFET (International Rectifier)
  • IRF5305L - Power MOSFET (International Rectifier)
  • IRF5305LPBF - HEXFET Power MOSFET (International Rectifier)
  • IRF5305PbF - Power MOSFET (International Rectifier)
  • IRF5305S - Power MOSFET (International Rectifier)
  • IRF5305SPBF - HEXFET Power MOSFET (International Rectifier)
  • IRF530 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF530 - N-Channel MOSFET (Motorola Inc)
  • IRF530 - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR (STMicroelectronics)
  • IRF530 - Power MOSFET (International Rectifier)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc P-Channel MOSFET Transistor IRF5305,IIRF5305 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.06Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -31 IDM Drain Current-Single Pulsed -110 PD Total Dissipation @TC=25℃ 110 Tj Max.
Published: |