IRF5305 Datasheet | Inchange Semiconductor

FEATURES - Static drain-source on-resistance: RDS(on)≤0.06Ω - Enhancement mode: - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRIPTION - bine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 Gate-Source Voltage ±20 Drain Current-Continuous -31 Drain Current-Single Pulsed -110 Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.4...