IRF9530 - P-Channel MOSFET

Features

-12A，-100V.
Single pulse avalanche energy rated.
Static Drain-Source On-Resistance: RDS(on) =0.3Ω(Max).
SOA is power dissipation limited.
Nanosecond switching speeds.
Linear transfer characteristics.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IRF9530
Manufacturer	INCHANGE
File Size	229.29 KB
Description	P-Channel MOSFET
Datasheet	IRF9530 Datasheet
Additional preview pages of the IRF9530 datasheet.

📁 Similar Datasheet

IRF9530 - P-Channel Power MOSFET (Intersil Corporation)
IRF9530 - Power MOSFET (International Rectifier)
IRF9530 - P-Channel Power MOSFETs (Fairchild Semiconductor)
IRF9530 - Power MOSFET (Vishay)
IRF9530-220M - P-Channel Power MOSFET (Seme LAB)
IRF9530N - Power MOSFET (International Rectifier)
IRF9530NL - Power MOSFET (International Rectifier)
IRF9530NL - Power MOSFET (Infineon)
IRF9530NLPbF - Power MOSFET (Infineon)
IRF9530NLPBF - Power MOSFET (International Rectifier)

Other Datasheets by INCHANGE

IRF9530N - P-Channel MOSFET
IRF9530NL - P-Channel MOSFET
IRF9530NS - P-Channel MOSFET
IRF9530PBF - P-Channel MOSFET
IRF9530S - P-Channel MOSFET
IRF9540N - P-Channel MOSFET
IRF9540NL - P-Channel MOSFET
IRF9540NS - P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc P-Channel Mosfet Transistor INCHANGE Semiconductor IRF9530 FEATURES ·-12A，-100V ·Single pulse avalanche energy rated ·Static Drain-Source On-Resistance: RDS(on) =0.

Published: Oct 3, 2020 |