Key Features
- -12A，-100V
- Single pulse avalanche energy rated
- Static Drain-Source On-Resistance: RDS(on) =0.3Ω(Max)
- SOA is power dissipation limited
- Nanosecond switching speeds
- Linear transfer characteristics
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
IRF9530NSPbF
|
Infineon |
Power MOSFET |
|
IRF9530-220M
|
Seme LAB |
P-Channel Power MOSFET |
|
IRF9530S
|
Vishay |
Power MOSFET |
|
IRF9530NS
|
VBsemi |
P-Channel MOSFET |
|
IRF9530
|
Kexin Semiconductor |
P-Channel MOSFET |
|
IRF9530
|
Vishay |
Power MOSFET |
|
IRF9531
|
Samsung Semiconductor |
P-Channel Power MOSFET |
|
IRF9533
|
International Rectifier |
TRANSISTORS |
