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IRF9530N Datasheet Preview

IRF9530N Datasheet

P-Channel MOSFET

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isc P-Channel MOSFET Transistor
IRF9530N,IIRF9530N
·FEATURES
·Static drain-source on-resistance:
RDS(on)0.2
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
-14
IDM
Drain Current-Single Pulsed
-56
PD
Total Dissipation @TC=25
79
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX
1.9
62
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

IRF9530N Datasheet Preview

IRF9530N Datasheet

P-Channel MOSFET

No Preview Available !

isc P-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= -250μA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID= -250μA
RDS(on)
Drain-Source On-Resistance
VGS= -10V; ID= -8.4A
IGSS
Gate-Source Leakage Current
VGS= ±20V
IDSS
Drain-Source Leakage Current
VDS= -100V; VGS= 0V
VSD
Diode forward voltage
Is= -8.4A; VGS = 0V
IRF9530N,IIRF9530N
MIN TYP MAX UNIT
-100
V
-2.0
-4.0
V
0.2
Ω
±100 nA
-25
μA
-1.6
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number IRF9530N
Description P-Channel MOSFET
Maker INCHANGE
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IRF9530N Datasheet PDF






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