IRFP260N Datasheet (PDF) Download
Inchange Semiconductor
IRFP260N

Key Features

  • Static drain-source on-resistance: RDS(on)≤40mΩ
  • Enhancement mode:
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation
  • DESCRITION
  • Fast switching
  • Fully Avalanche Rated