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IRFP460A - N-Channel MOSFET

Key Features

  • With TO-247 packaging.
  • Uninterruptible power supply.
  • High speed switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP460A ·FEATURES ·With TO-247 packaging ·Uninterruptible power supply ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 20 13 A IDM Drain Current-Single Pulsed 80 A PD Total Dissipation 280 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.45 ℃/W isc website：www.iscsemi.