MJE2901T
MJE2901T is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -60V(Min)
- High DC Current Gain-
: h FE= 25-100@IC= -3A
- plement to Type MJE2801T
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use as an output device in plementary audio amplifiers up to 35 watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-4
Collector Current-Continuous
-10
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
-5
℃
Tstg...
