C
* UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
* Generation 4 IGBT design provides tighter paramet.

Vce 430µF D.U.T. Vge VC 90% 10% 90% td(off) Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr.

IRG4BC20U

IRG4BC20UD-S

IRG4BC20UD-SPBF

IRG4BC20UPbF

IRG4BC20F

IRG4BC20FD

IRG4BC20FD-S

IRG4BC20FD-SPBF

IRG4BC20FDPBF

IRG4BC20FPBF

IRG4BC20K

IRG4BC20K-S

IRG4BC20K-SPBF

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