IRG4BC20UD-S transistor equivalent, insulated gate bipolar transistor.
* UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
* Generation 4 IGBT design provides tighter parameter d.
/dt vs. dif/dt
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7
IRG4BC20UD-S
Same ty pe device as D .U.T. 90%
80% of Vce
430µF D .U .T.
Vge
VC
10% .
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