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IRG4BC20UD-S Datasheet, IRF

IRG4BC20UD-S transistor equivalent, insulated gate bipolar transistor.

IRG4BC20UD-S Avg. rating / M : 1.0 rating-14

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IRG4BC20UD-S Datasheet

Features and benefits


* UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
* Generation 4 IGBT design provides tighter parameter d.

Application

/dt vs. dif/dt www.irf.com 7 IRG4BC20UD-S Same ty pe device as D .U.T. 90% 80% of Vce 430µF D .U .T. Vge VC 10% .

Image gallery

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TAGS

IRG4BC20UD-S
INSULATED
GATE
BIPOLAR
TRANSISTOR
IRF

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