IRG4BC20U - Insulated gate bipolar transistor

Datasheet Details

Part number	IRG4BC20U
Manufacturer	IRF
File Size	354.36 KB
Description	Insulated gate bipolar transistor
Datasheet	IRG4BC20U_IRF.pdf

UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free C G E n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified.

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Published: May 5, 2005 |