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Integrated Silicon Solution Electronic Components Datasheet

IS42SM16400G Datasheet

1M x 16Bits x 4Banks Low Power Synchronous DRAM

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IS42SM16400G
1M x 16Bits x 4Banks Low Power Synchronous DRAM
Description
These IS42SM16400G are Low Power 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 16 bits.
These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and
output voltage levels are compatible with LVCMOS.
Features
ƒ JEDEC standard 3.3V power supply.
• Auto refresh and self refresh.
• All pins are compatible with LVCMOS interface.
• 4K refresh cycle / 64ms.
• Programmable Burst Length and Burst Type.
- 1, 2, 4, 8 or Full Page for Sequential Burst.
- 4 or 8 for Interleave Burst.
• Programmable CAS Latency : 2,3 clocks.
• Programmable Driver Strength Control
- Full Strength or 1/2, 1/4 of Full Strength
• Deep Power Down Mode.
• All inputs and outputs referenced to the positive edge of the
system clock.
• Data mask function by DQM.
• Internal 4 banks operation.
• Burst Read Single Write operation.
• Special Function Support.
- PASR(Partial Array Self Refresh)
- Auto TCSR(Temperature Compensated Self Refresh)
• Automatic precharge, includes CONCURRENT Auto Precharge
Mode and controlled Precharge.
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information
and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or
malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or
effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to
its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Rev. A | July 2010
www.issi.com - DRAM@issi.com
1
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Integrated Silicon Solution Electronic Components Datasheet

IS42SM16400G Datasheet

1M x 16Bits x 4Banks Low Power Synchronous DRAM

No Preview Available !

Figure1: 54Ball FBGA Ball Assignment
1
2
3 456 7
8
9
A VSS DQ15 VSSQ
B DQ14 DQ13 VDDQ
C DQ12 DQ11 VSSQ
D DQ10 DQ9 VDDQ
E DQ8 NC VSS
F UDQM CLK CKE
G NC A11 A9
H A8 A7 A6
J
VSS A5
A4
VDDQ DQ0 VDD
VSSQ DQ2 DQ1
VDDQ DQ4 DQ3
VSSQ DQ6 DQ5
VDD LDQM DQ7
/CAS /RAS /WE
BA0 BA1 /CS
A0 A1 A10
A3 A2 VDD
IS42SM16400G
[Top View]
Rev. A | July 2010
www.issi.com - DRAM@issi.com
2
Free Datasheet http://www.datasheet4u.com/


Part Number IS42SM16400G
Description 1M x 16Bits x 4Banks Low Power Synchronous DRAM
Maker ISSI
Total Page 27 Pages
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