Datasheet4U Logo Datasheet4U.com

IS61WV25616EDALL Datasheet 256k X 16 High Speed Asynchronous CMOS Static Ram

Manufacturer: ISSI (now Infineon)

Overview: IS61WV25616EDALL 256Kx16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM with ECC AUGUST 2020.

General Description

The ISSI IS61WV25616EDALL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

When CS# is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Key Features

  • High-speed access time: 20ns.
  • Single power supply.
  • 1.65V-2.2V VDD.
  • Low Standby Current:1.5mA (typical).
  • Fully static operation: no clock or refresh required.
  • Data control.
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.
  • Error Detection and Correction.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS61WV25616EDBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616ALL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616ALS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616BLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616BLS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616LEBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632ALL 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632ALS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632BLL 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632BLS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV25616EDALL Distributor