IS64WV1024BLL Datasheet 128K x 8 HIGH-SPEED CMOS STATIC RAM

Manufacturer: ISSI (now Infineon)

Datasheet Details

The ISSI IS63/64WV1024BLL is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM.

The IS63/64WV1024BLL is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

IS63WV1024BLL IS64WV1024BLL 128K x 8 HIGH-SPEED CMOS STATIC RAM MAY.

High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V.
3.6V.
High-performance, low-power CMOS process.
CMOS Low Power Operation 50 mW (typical) operating current 25 µW (typical) standby current.
Multiple center power and ground pins for greater noise immunity.
Easy memory expansion with CE and OE options.
CE power-down.
Fully static operation: no clock or refresh required.
TTL compatible inputs and outputs.

Part Number	Description
IS64WV102416BLL	1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS64WV102416DALL	1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV102416DBLL	1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV102416FBLL	1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV10248BLL	1M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV10248EDBLL	1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV10248EEBLL	1M x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS64WV12816BLL	128K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV12816EDBLL	128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV12816EFALL	128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM