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IS64WV6416EEBLL Datasheet 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Manufacturer: ISSI (now Infineon)

Download the IS64WV6416EEBLL datasheet PDF. This datasheet also includes the IS61WV6416EEBLL variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS61WV6416EEBLL-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

The ISSI IS61/64WV6416EEBLL is a high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Overview

IS61WV6416EEBLL IS64WV6416EEBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC MARCH.

Key Features

  • High-speed access time: 8, 10 ns.
  • Low Active Power: 85 mW (typical).
  • Low Standby Power: 7 mW (typical) CMOS standby.
  • Single power supply.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and Automotive temperature support.
  • Lead-free available.
  • Error Detection and Error Correction.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS64WV6416BLL 64K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV6416DBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV6416DBLS 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC
IS64WV102416DALL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV102416DBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV102416FBLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV10248BLL 1M x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV10248EEBLL 1M x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM