IS66WV1M16EBLL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16EBLL Features
* High-Speed access time : - 70ns ( IS66WV1M16EALL ) - 60ns (IS66/67WV1M16EBLL )
* CMOS Lower Power Operation
* Single Power Supply
* VDD =1.7V~1.95V( IS66WV1M16EALL )
* VDD =2.5V~3.6V (IS66/67WV1M16EBLL )
* Three State Outputs
* Data Control for Upper and Lower bytes