Overview: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT20N360HV IXBH20N360HV VCES = IC110 = VCE(sat) 3600V 20A 3.4V Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM
SSOA (RBSOA)
TSC (SCSOA)
PC TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3600 3600
± 20 ± 30 TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load
VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive TC = 25°C 70 20 220 ICM = 160 VCES 1500
10 430 -55 ... +150 150 -55 ... +150 Maximum Lead Temperature for Soldering Plastic Body for 10s 300 260 Mounting Torque (TO-247HV) 1.13/10 TO-268HV TO-247HV 4 6 V V V V A A A
A V
μs W °C °C °C °C °C Nm/lb.in g g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 20A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 3600 V 3.0 5.0 V 25 μA 500 μA ±100 nA 2.9 3.4 V 3.
