Overview: IXBH 40N160 High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor
N-Channel, Enhancement Mode IC25 = 33 A VCES = 1600 V VCE(sat) = 6.2 V typ. tfi = 40 ns
C TO-247 AD G E G
C E C (TAB) G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight
Symbol
BVCES VGE(th) ICES
IGES VCE(sat) Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous Transient Maximum Ratings 1600 1600 V V ±20 V ±30 V TC = 25°C TC = 90°C TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 22 Ω VCE = 0.8·VCES Clamped inductive load, L = 100 µH 33 20 40
ICM = 40 A A A
A TC = 25°C 1.6 mm (0.063 in) from case for 10 s 350
-55 ... +150 150
-55 ... +150 300 W
°C °C °C °C Mounting torque 1.15/10 Nm/lb.in. 6g Conditions
IC = 1 mA, VGE = 0 V IC = 2 mA, VCE = VGE VCE = 0.8·VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. 1600 V 4 8V TJ = 25°C TJ = 125°C 400 µA 3 mA
± 500 nA TJ = 125°C 6.2 7.1 V 7.
