IXBH40N160 Description
IXBH 40N160 High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IC25 = 33 A VCES = 1600 V VCE(sat) = 6.2 V typ. tfi = 40 ns C TO-247 AD G E G C E C (TAB) G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Symbol BVCES VGE(th) ICES IGES VCE(sat) Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150...
IXBH40N160 Key Features
- International standard package JEDEC TO-247 AD
- High Voltage BIMOSFETTM
- replaces high voltage Darlingtons and series connected MOSFETs
- lower effective RDS(on)
- Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
- MOS Gate turn-on
- drive simplicity
- Intrinsic diode