* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Frequency Operation Advantages
* Low Gate Drive Requirement
* High Power Density Applications
* Switch-Mode and Resonant-Mode
IXBL60N360 Datasheet (172.27 KB)
IXBL60N360
IXYS
172.27 KB
Bipolar mos transistor.
Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL60N360 VCES = IC110 = VCE(sat) 3600.
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