• Part: IXBN75N170
  • Description: Monolithic Bipolar MOS Transistor
  • Manufacturer: IXYS
  • Size: 169.13 KB
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Datasheet Summary

Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC90 VCE(sat) = = ≤ 1700V 75A 3.1V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous 1700 1700 ±20 Transient ±30 V TC = 25°C TC = 90°C TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 145 75 ICM = 150 VCE < 0.8 - VCES -55 ... +150 W °C 150 °C -55 ......