IXBA14N300HV - Bipolar MOS Transistor

IXYS (now Littelfuse)

Key Features

High Voltage Packages.
High Blocking Voltage.
Anti-Parallel Diode.
Low Conduction Losses Advantages.
Low Gate Drive Requirement.
High Power Density.

IXBA14N300HV bipolar mos transistor by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXBA14N300HV
Manufacturer	IXYS (now Littelfuse)
File Size	3.45 MB
Description	Bipolar MOS Transistor
Datasheet	IXBA14N300HV Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBT14N300HV IXBH14N300HV VCES = IC110 = VCE(sat)  3000V 14A 2.7V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM T stg TL T SOLD FC Md Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 38 A 14 A 120 A VGE = 15V, TVJ = 125°C, RG = 20 ICM = 120 A Clamped Inductive Load 1500 V VGE = 15V, TJ = 125°C, RG = 82, VCE = 1500V, Non-Repetitive 10 µs TC = 25°C 200 W -55 ... +150 °C 150 °C -55 ...