IXYS IXBA14N300HV
Bipolar MOS Transistor
| Part No. | IXBA14N300HV |
|---|---|
| Datasheet | IXBA14N300HV Download |
| Manufacturer |  IXYS |
| Description | Bipolar MOS Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 38 A 14 A 120 A VGE = 15V, TVJ = 125°C, RG = 20 ICM = 120 A Clamped Inductive Load 1500 V VGE = 15V, TJ = 125°C, RG = 82, VCE = 1500V, Non-Repetitive 10 µs TC = 25°C 200 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Force (TO-263HV) Mounting Torque (TO-247HV) 10..65 / 2.2..14.6 1.13/10 N/lb Nm/lb.in TO-263HV TO-268HV TO-247HV 2.5 g 4.0 g 6.0 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250µA, VGE = 0V V GE(th) IC = 250µA, VCE = VGE I V = 0.8● V , V = 0V CES CE CES GE IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = 14A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 3000 V 3.0 5.0 V T = 125°C J T = 125°C J 25 µA 750 µA ±100 nA 2.2 2.7 V 2.7 V TO-263HV (IXBA..HV) G E C (Tab) TO-268HV (IXBT..HV) G E C ((Tab) TO-247HV (IXBH..HV) G E...
