IXBF12N300
IXBF12N300 is Monolithic Bipolar MOS Transistor manufactured by IXYS.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
(Electrically Isolated Tab)
VCES = IC110 = VCE(sat) ≤
3000V 11A 3.2V
Symbol Test Conditions
VCES VCGR
VGES VGEM
IC25 IC110 ICM
SSOA (RBSOA)
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient
TC = 25°C TC = 110°C TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 20Ω Clamped Inductive Load
PC TJ TJM Tstg TL TSOLD FC VISOL Weight
TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Force 50/60Hz, 1 Minute
Maximum Ratings
3000 3000
± 20 ± 30
26 A 11 A 98 A
ICM = 98 1500
125 W
-55 ... +150 150
-55 ... +150
°C °C °C
300 °C 260 °C
20..120 /...
