IXYS IXBF12N300
Monolithic Bipolar MOS Transistor
| Part No. | IXBF12N300 |
|---|---|
| Datasheet | IXBF12N300 Download |
| Manufacturer |  IXYS |
| Description | Monolithic Bipolar MOS Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
3000 3000 V V ± 20 ± 30 V V 26 A 11 A 98 A ICM = 98 1500 A V 125 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 260 °C 20..120 / 4.5..27 4000 Nm/lb.in. V~ 5g Symbol Test Conditions Characteristic Values (TJ = 25°C Unless Otherwise Specified) Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 3000 V VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V ICES VCE = 0.8● VCES, VGE = 0V Note 2, TJ = 125°C 25 μA 1 mA IGES VCE = 0V, VGE = ± 20V ±100 nA VCE(sat) IC = IC90, VGE = 15V, Note 1 2.8 3.2 V TJ = 125°C 3.5 V ISOPLUS i4-PakTM 12 5 Isolated Tab 1 = Gate 2 = Emitter 5 = Collector
FEATURES
z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 4000V~ Electrical Isolation z High Blocking Voltage z High Peak Current Capability z Low Saturation Voltage Advantages z Low Gate Drive Requirement z High Power DensityAPPLICATIONS
z Switch-Mode and Resonant-Mode Power Supplies z Capacitor Discharge Circuits z Uninterrupted Power Supplies(UPS) z Laser Drivers z AC Switches © 2012 IXYS CORPORATION, All Rights Reserved DS100121B(06/12) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min.
