IXBF12N300 Overview
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor SSOA (RBSOA) TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 20Ω Clamped Inductive Load PC TJ TJM Tstg TL TSOLD FC VISOL Weight TC = 25°C z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 4000V~ Electrical Isolation z High Blocking Voltage z High Peak Current Capability z Low Saturation Voltage z Low Gate Drive Requirement z High Power Density