IXBF28N300 Description
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = IC90 = VCE(sat) 3000V 28A 2.7V (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA.
IXBF28N300 Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 4000V~ Electrical Isolation
- High Blocking Voltage
- High Peak Current Capability
- Low Saturation Voltage
- Low Gate Drive Requirement
- High Power Density