• Part: IXBF28N300
  • Description: Bipolar MOS Transistor
  • Category: Transistor
  • Manufacturer: IXYS
  • Size: 202.43 KB
Download IXBF28N300 Datasheet PDF
IXYS
IXBF28N300
IXBF28N300 is Bipolar MOS Transistor manufactured by IXYS.
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = IC90 = VCE(sat)  3000V 28A 2.7V (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 3000 ± 20 ± 30 TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 15 Clamped Inductive Load VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive TC = 25°C 50 28 220 ICM = 220 VCE  1500 10 216 -55 ... +150 150 -55 ... +150 Maximum Lead Temperature for Soldering Plasti...