IXBF14N300
IXBF14N300 is Bipolar MOS Transistor manufactured by IXYS.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
(Electrically Isolated Tab)
Symbol Test Conditions
Maximum Ratings
VCES V
TJ = 25°C to 150°C
T = 25°C to 150°C, R = 1M
VGES VGEM
Continuous Transient
± 20
± 30
IC25
TC = 25°C
IC90
TC = 90°C
TC = 25°C, 1ms
SSOA
VGE = 15V, TVJ = 125°C, RG = 20
ICM = 120
(RBSOA) Clamped Inductive Load
V 1500
V = 15V, T = 125°C,
(SCSOA)
=
82,
V CE
=
1500V,
Non-Repetitive
µs...
