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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBF14N300
(Electrically Isolated Tab)
Symbol Test Conditions
Maximum Ratings
VCES V
CGR
TJ = 25°C to 150°C
T = 25°C to 150°C, R = 1M
J
GE
3000
V
3000
V
VGES VGEM
Continuous Transient
± 20
V
± 30
V
IC25
TC = 25°C
IC90
TC = 90°C
ICM
TC = 25°C, 1ms
28
A
14
A
98
A
SSOA
VGE = 15V, TVJ = 125°C, RG = 20
ICM = 120
A
(RBSOA) Clamped Inductive Load
V 1500
V
CE
TSC
V = 15V, T = 125°C,
GE
J
(SCSOA)
R G
=
82,
V CE
=
1500V,
Non-Repetitive
10
µs
PC
TC = 25°C
120
W
T
-55 ... +150
°C
J
T
150
°C
JM
Tstg
-55 ... +150
°C
T
Maximum Lead Temperature for Soldering
300
°C
L
1.6 mm (0.062 in.) from Case for 10s
F C
VISOL Weight
Mounting Force 50/60Hz, 5 Seconds
20.
IXBF14N300 Datasheet
