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IXBA12N300HV - Bipolar MOS Transistor

Key Features

  • High Voltage Package.
  • High Blocking Voltage.
  • Anti-Parallel Diode.
  • Low Conduction Losses Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBA12N300HV IXBT12N300HV VCES = IC110 = VCE(sat)  3000V 12A 3.2V Symbol VCES VCGR VGES VGEM I C25 I C110 ICM SSOA (RBSOA) PC TJ TJM T stg TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient T = 25°C C T = 110°C C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 30 Clamped Inductive Load TC = 25°C Plastic Body for 10s TO-263HV TO-268HV Maximum Ratings 3000 V 3000 V ± 20 V ± 30 V 30 A 12 A 100 A ICM = 98 A 1500 V 160 W -55 ... +150 °C 150 °C -55 ... +150 °C 260 °C 2.5 g 4.0 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BV CES I = 250µA, V = 0V C GE VGE(th) IC = 250µA, VCE = VGE ICES VCE = 0.