IXBA12N300HV
IXBA12N300HV is Bipolar MOS Transistor manufactured by IXYS.
Features
- High Voltage Package
- High Blocking Voltage
- Anti-Parallel Diode
- Low Conduction Losses
Advantages
- Low Gate Drive Requirement
- High Power Density
Applications:
- Switch-Mode and Resonant-Mode Power Supplies
- Uninterruptible Power Supplies (UPS)
- Laser Generators
- Capacitor Discharge Circuits
- AC Switches
© 2021 Littelfuse, Inc.
DS100496B(6/21)
Not for New Design
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max. g
I = 12A, V = 10V, Note 1
S f S
Cies C oes
Cres
V = 25V, V = 0V, f = 1MHz
1290 p F
56 p F
19 p F
Q g(on)
Qge Qgc
IC = 12A, VGE = 15V, VCE = 1000V
62 n...
