IXYS IXBA12N300HV
Bipolar MOS Transistor
| Part No. | IXBA12N300HV |
|---|---|
| Datasheet | IXBA12N300HV Download |
| Manufacturer |  IXYS |
| Description | Bipolar MOS Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
3000 V 3000 V ± 20 V ± 30 V 30 A 12 A 100 A ICM = 98 A 1500 V 160 W -55 ... +150 °C 150 °C -55 ... +150 °C 260 °C 2.5 g 4.0 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BV CES I = 250µA, V = 0V C GE VGE(th) IC = 250µA, VCE = VGE ICES VCE = 0.8● VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = 12A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 3000 V 3.0 5.0 V T = 125°C J 25 µA 1 mA ±100 nA 2.8 3.2 V TJ = 125°C 3.5 V TO-263HV (IXBA..HV) G E C (Tab) TO-268HV (IXBT..HV) G E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector
FEATURES
● High Voltage Package● High Blocking Voltage
● Anti-Parallel Diode
● Low Conduction Losses Advantages
● Low Gate Drive Requirement
● High Power Density
APPLICATIONS
:● Switch-Mode and Resonant-Mode Power Supplies
● Uninterruptible Power Supplies (UPS)
● Laser Generators
● Capacitor Discharge Circuits
● AC Switches © 2021 Littelfuse, Inc. DS100496B(6/21) Not for New Design Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min.
