IXBA12N300HV Overview
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient T = 25°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 30 Clamped Inductive Load TC = 25°C C (Tab) TO-268HV (IXBT..HV) G E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector Features High Voltage Package High Blocking Voltage Anti-Parallel Diode Low Conduction Losses Low Gate Drive Requirement High Power Density Switch-Mode and Resonant-Mode Power Supplies
IXBA12N300HV Key Features
- High Voltage Package
- High Blocking Voltage
- Anti-Parallel Diode
- Low Conduction Losses
- Low Gate Drive Requirement
- High Power Density