IXYS IXBA16N170AHV
Bipolar MOS Transistor
| Part No. | IXBA16N170AHV |
|---|---|
| Datasheet | IXBA16N170AHV Download |
| Manufacturer |  IXYS |
| Description | Bipolar MOS Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 1700 V 1700 V ± 20 V ± 30 V TC = 25°C TC = 90°C TC = 25°C, 1ms 16 A 10 A 40 A VGE = 15V, TVJ = 125°C, RG = 33 ICM = 40 A Clamped Inductive Load 1350 V VGE = 15V, VCE = 1200V, TJ = 125°C RG = 33, Non Repetitive 10 μs TC = 25°C 150 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Force (TO-263) 10..65 / 22..14.6 N/lb TO-263 TO-268 2.5 g 4.0 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8● VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = 10A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 1700 V 2.5 5.5 V TJ = 125°C 50 μA 1.5 mA ±100 nA 6.0 V TJ = 125°C 5.0 V TO-263HV (IXBA) G E C (Tab) TO-268HV (IXBT) G E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector
FEATURES
● High Voltage Package● High Blocking Voltage
● Anti-...
