IXBA16N170AHV - Bipolar MOS Transistor

IXYS (now Littelfuse)

Key Features

High Voltage Package.
High Blocking Voltage.
Anti-Parallel Diode.
Low Conduction Losses Advantages.
Low Gate Drive Requirement.
High Power Density.

IXBA16N170AHV bipolar mos transistor by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXBA16N170AHV
Manufacturer	IXYS (now Littelfuse)
File Size	176.63 KB
Description	Bipolar MOS Transistor
Datasheet	IXBA16N170AHV Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information High Voltage, High Gain IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV Bipolar MOS Transistor VCES = IC25 = VCE(sat)  1700V 16A 6.0V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 1700 V 1700 V ± 20 V ± 30 V TC = 25°C TC = 90°C TC = 25°C, 1ms 16 A 10 A 40 A VGE = 15V, TVJ = 125°C, RG = 33 ICM = 40 A Clamped Inductive Load 1350 V VGE = 15V, VCE = 1200V, TJ = 125°C RG = 33, Non Repetitive 10 μs TC = 25°C 150 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Force (TO-263) 10..65 / 22.