• Part: IXBA16N170AHV
  • Description: Bipolar MOS Transistor
  • Category: Transistor
  • Manufacturer: IXYS
  • Size: 176.63 KB
Download IXBA16N170AHV Datasheet PDF
IXYS
IXBA16N170AHV
IXBA16N170AHV is Bipolar MOS Transistor manufactured by IXYS.
Features - High Voltage Package - High Blocking Voltage - Anti-Parallel Diode - Low Conduction Losses Advantages - Low Gate Drive Requirement - High Power Density Applications: - Switch-Mode and Resonant-Mode Power Supplies - Uninterruptible Power Supplies (UPS) - Laser Generators - Capacitor Discharge Circuits - AC Switches © 2013 IXYS CORPORATION, All Rights Reserved DS100551(8/13) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 10A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 10A, VGE = 15V, VCE = 0.5 - VCES td(on) tri td(off) tfi Eoff Inductive load, TJ = 25°C IC = 10A, VGE = 15V VCE = 0.8 - VCES, RG = 10 Note 2 td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 125°C IC = 10A, VGE = 15V VCE = 0.8 - VCES, RG = 10 Note 2 Rth JC Characteristic Values Min. Typ. Max. 1400 p F 90 p F 31 p F 65 n C 13 n...