IXBA16N170AHV
IXBA16N170AHV is Bipolar MOS Transistor manufactured by IXYS.
Features
- High Voltage Package
- High Blocking Voltage
- Anti-Parallel Diode
- Low Conduction Losses
Advantages
- Low Gate Drive Requirement
- High Power Density
Applications:
- Switch-Mode and Resonant-Mode Power Supplies
- Uninterruptible Power Supplies (UPS)
- Laser Generators
- Capacitor Discharge Circuits
- AC Switches
© 2013 IXYS CORPORATION, All Rights Reserved
DS100551(8/13)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified) gfs
IC = 10A, VCE = 10V, Note 1
Cies Coes Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on) Qge Qgc
IC = 10A, VGE = 15V, VCE = 0.5
- VCES td(on) tri td(off) tfi Eoff
Inductive load, TJ = 25°C IC = 10A, VGE = 15V VCE = 0.8
- VCES, RG = 10
Note 2 td(on) tri Eon td(off) tfi Eoff
Inductive load, TJ = 125°C IC = 10A, VGE = 15V VCE = 0.8
- VCES, RG = 10
Note 2
Rth JC
Characteristic Values
Min.
Typ. Max.
1400 p F
90 p F
31 p F
65 n C
13 n...