IXBN42N170A is Monolithic Bipolar MOS Transistor manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXBN75N170 | Monolithic Bipolar MOS Transistor |
| IXBN75N170A | Bipolar MOS Transistor |
| IXBA12N300HV | Bipolar MOS Transistor |
| IXBA14N300HV | Bipolar MOS Transistor |
| IXBA16N170AHV | Bipolar MOS Transistor |
+150 2500 3000 1.5/13 1.3/11.5 30 μs W °C °C °C V~ V~ Nm/lb.in. g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 750μA, VCE = VGE ICES VCE = 0.8 VCES, VGE = 0V IGES VCE(sat).
