Overview: BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170A VCES = I = C90 VCE(sat) t = fi(typ) 1700V 42A 6.00V 60ns E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA)
PC TJ TJM Tstg TL TSOLD VISOL
Md
Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous 1700 V 1700 V ±20 V Transient ±30 V TC = 25°C TC = 90°C TC = 25°C, 1ms 75 A 42 A 350 A VGE= 15V, TVJ = 125°C, RG = 1 ICM = 100 A Clamped Inductive Load VCE < 0.8 • VCES TC = 25°C 625 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 300 °C 260 °C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque (M4) 2500 3000
1.5/13 1.3/11.5 V~ V~
Nm/lb.in. Nm/lb.in. 30 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 1.5mA, VCE = VGE ICES
IGES VCE(sat) VCE = 0.8 • VCES, VGE = 0V TJ = 125C VCE = 0V, VGE = ± 20V IC = IC90, VGE = 15V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1700 V 2.5 5.5 V 4.95 5.15 50 μA 3 mA
±100 nA
6.
