IXBN75N170A
IXBN75N170A is Bipolar MOS Transistor manufactured by IXYS.
Features
- International Standard Package
- High Blocking Voltage
- Fast Switching
- Isolation Voltage 3000 V~
- High Current Handling Capability
- Anti-Parallel Diode
Advantages
- High Power Density
- Low Gate Drive Requirement
- Easy to Mount with 2 Screws
- Intergrated Diode Can Be Used for
Protection
Applications
- Switched-Mode and Resonant-Mode Power Supplies
- UPS
- AC Motor Drives
- Substitutes for High Voltage MOSFET
© 2016 IXYS CORPORATION, All Rights Reserved
DS98938B(8/16)
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gf S
IC = IC90, VCE = 10V, Note 1
Cies Coes Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
IC = IC90, VGE = 15V, VCE = 0.5
- VCES
Qgc td(on) tri td(off) tfi Eoff
Inductive load, TJ = 25°C
IC = IC90, VGE = 15V VCE = 0.8
- VCES, RG = 1 Note 2 td(on) tri td(off) tfi Eoff
Inductive load, TJ = 125°C
IC = IC90, VGE = 15V VCE = 0.8
- VCES, RG = 1 Note 2
Rth JC Rth CS
Characteristic Values
Min.
Typ....
