IXBN75N170A Description
BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170A VCES = I = C90 VCE(sat) t = fi(typ) 1700V 42A 6.00V 60ns E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions Maximum Ratings TJ = 25°C to.
IXBN75N170A Key Features
- International Standard Package
- High Blocking Voltage
- Fast Switching
- Isolation Voltage 3000 V~
- High Current Handling Capability
- Anti-Parallel Diode
- High Power Density
- Low Gate Drive Requirement
- Easy to Mount with 2 Screws