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IXBN75N170A - Bipolar MOS Transistor

Features

  • International Standard Package.
  • High Blocking Voltage.
  • Fast Switching.
  • Isolation Voltage 3000 V~.
  • High Current Handling Capability.
  • Anti-Parallel Diode Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.
  • Easy to Mount with 2 Screws.
  • Intergrated Diode Can Be Used for Protection.

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Full PDF Text Transcription

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BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170A VCES = I = C90  VCE(sat) t = fi(typ) 1700V 42A 6.00V 60ns E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous 1700 V 1700 V ±20 V Transient ±30 V TC = 25°C TC = 90°C TC = 25°C, 1ms 75 A 42 A 350 A VGE= 15V, TVJ = 125°C, RG = 1 ICM = 100 A Clamped Inductive Load VCE < 0.8 • VCES TC = 25°C 625 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 300 °C 260 °C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque (M4) 2500 3000 1.5/13 1.3/11.5 V~ V~ Nm/lb.in.
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