IXBN75N170
IXBN75N170 is Monolithic Bipolar MOS Transistor manufactured by IXYS.
Preliminary Technical Information
Bi MOSFETTM Monolithic Bipolar MOS Transistor
VCES IC90
VCE(sat)
= =
≤
1700V 75A 3.1V
Symbol
VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA)
PC TJ TJM Tstg TL TSOLD VISOL
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous
1700 1700
±20
Transient
±30 V
TC = 25°C TC = 90°C TC = 25°C, 1ms
VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load
TC = 25°C
145 75
ICM = 150 VCE < 0.8
- VCES
-55 ... +150
W °C
150 °C
-55 ... +150
°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10
300 °C 260 °C
50/60Hz IISOL ≤ 1m A t = 1min t = 1s
Mounting Torque
Terminal Connection Torque (M4)
2500...
