IXBN75N170 Overview
+150 A A A A W °C 150 °C -55 ... 30 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 1.5mA, VCE = VGE ICES VCE = 0.8 VCES, VGE = 0V TJ = 125°C.
IXBN75N170 datasheet by IXYS (now Littelfuse).
| Part number | IXBN75N170 |
|---|---|
| Datasheet | IXBN75N170-IXYS.pdf |
| File Size | 169.13 KB |
| Manufacturer | IXYS (now Littelfuse) |
| Description | Monolithic Bipolar MOS Transistor |
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+150 A A A A W °C 150 °C -55 ... 30 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 1.5mA, VCE = VGE ICES VCE = 0.8 VCES, VGE = 0V TJ = 125°C.
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