IXBN75N170 Description
+150 A A A A W °C 150 °C -55 ... 30 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 1.5mA, VCE = VGE ICES VCE = 0.8 VCES, VGE = 0V TJ = 125°C.
- Part: IXBN75N170
- Manufacturer: IXYS
- Size: 169.13 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXBN75N170A | Bipolar MOS Transistor |
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| IXBA16N170AHV | Bipolar MOS Transistor |