Description
The IXRFD615X2 is a dual CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in PushPull and Class E Push-Pull HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.
Features
- and wide safety margin in operating voltage and power make the IXRFD615X2 unmatched in performance and value. The surface mount IXRFD615X2 is packaged in a lowinductance RF package incorporating advanced layout techniques to minimize stray lead inductances for optimum switching performance. The two drivers are constructed on a single substrate sharing a common ground via the substrate and therefore are not capable of ground isolated operation from each other. An example would be a half-bridge wh.
IXRFD615X2-IXYS.pdf
