IXYF30N170CV1 Datasheet (IXYS)

IXYF30N170CV1 - High Voltage IGBT

High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information IXYF30N170CV1 VCES = 1700V IC110 = 20A V CE(sat)  4.0V tfi(typ) = 95ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1700 V 1700 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2.7 Cla

IXYF30N170CV1 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 2500V~ Electrical Isolation

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Val

IXYF30N170CV1 Datasheet - IXYS

IXYF30N170CV1 - High Voltage IGBT

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