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IXYF40N450 High Voltage IGBT

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Description

Advance Technical Information High Voltage XPTTM IGBT IXYF40N450 (Electrically Isolated Tab) VCES = IC110 = VCE(sat)  4500V 32A 3.9V Symbol Test .

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Datasheet Specifications

Part number
IXYF40N450
Manufacturer
IXYS
File Size
192.13 KB
Datasheet
IXYF40N450-IXYS.pdf
Description
High Voltage IGBT

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2014 IXYS CORPORATION, All Rights Reserved DS100617(5/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Char

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