* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Applications
IXYF40N450 Datasheet (192.13 KB)
IXYF40N450
IXYS
192.13 KB
High voltage igbt.
Advance Technical Information High Voltage XPTTM IGBT IXYF40N450 (Electrically Isolated Tab) VCES = IC110 = VCE(sat) 4500V 32A 3.9V Symbol Test .
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