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IXYF30N170CV1 - High Voltage IGBT

IXYS

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Datasheet Details

Part number	IXYF30N170CV1
Manufacturer	IXYS
File Size	217.65 KB
Description	High Voltage IGBT
Datasheet	IXYF30N170CV1-IXYS.pdf

IXYF30N170CV1 Product details

Features

Silicon Chip on Direct-Copper Bond (DCB) Substrate.
Isolated Mounting Surface.
2500V~ Electrical Isolation.
High Blocking Voltage.
High Peak Current Capability.
Low Saturation Voltage Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 1700 V VGE(th) IC = 250A, VCE = VGE 3.0 5.0 V ICES VCE = 0.8.
VCES, VGE = 0V Note 3, TJ = 125C 25 A 4 mA IGES VCE = 0V, VGE = 2.

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Published: Feb 16, 2025 |