* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 2500V~ Electrical Isolation
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Val
IXYF30N170CV1 Datasheet (217.65 KB)
IXYF30N170CV1
IXYS
217.65 KB
High voltage igbt.
High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information IXYF30N170CV1 VCES = 1700V IC110 = 20A V CE(sat) .
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