IXYF30N170CV1 Datasheet - IXYS

IXYF30N170CV1, High Voltage IGBT

High Voltage XPTTM IGBT w/ Diode (Electrically Isolated Tab) Advance Technical Information IXYF30N170CV1 VCES = 1700V IC110 = 20A V CE(sat)  .

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IXYF30N170CV1-IXYS.pdf

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Datasheet Details

Part number:

IXYF30N170CV1

Manufacturer:

IXYS

File Size:

217.65 KB

Description:

High Voltage IGBT

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 2500V~ Electrical Isolation
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Val

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2017 IXYS CORPORATION, All Rights Reserved DS100820A(7/17) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs

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IXYF30N170CV1 High Voltage IGBT IXYS

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