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IXYS Corporation

GWM120-0075X1 Datasheet Preview

GWM120-0075X1 Datasheet

Three phase full Bridge

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www.DataSheet.co.kr
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
GWM 120-0075X1
VDSS = 75 V
ID25 = 110 A
RDSon typ. = 4.0 mW
L+
G3 G5
G1
S3 S5
S1 L1
L2
L3
G2 G4 G6
S2 S4 S6
L-
MOSFETs
Symbol Conditions
VDSS
VGS
TVJ = 25°C to 150°C
ID25 TC = 25°C
ID90 TC = 90°C
IF25 TC = 25°C (diode)
IF90 TC = 90°C (diode)
Maximum Ratings
75 V
± 20 V
110 A
85 A
110 A
80 A
Symbol
RDSon
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Erecoff
RthJC
RthJH
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
on chip level at
VGS = 10 V; ID = 60 A
VDS = 20 V; ID = 1 mA
VDS = VDSS; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
VGS = 10 V; VDS = 36 V; ID = 25 A
VGS = 10 V; VDS = 30 V
ID = 80 A; RG = 39
inductive load
TVJ = 125°C
with heat transfer paste (IXYS test setup)
4.0
7.2
2
0.1
115
30
30
130
100
500
100
0.20
0.50
0.01
1.3
4.9 mW
8.4 mW
4V
1 µA
mA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
1.0 K/W
1.6 K/W
Straight leads
Surface Mount Device
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110407d
1-6
Datasheet pdf - http://www.DataSheet4U.net/




IXYS Corporation

GWM120-0075X1 Datasheet Preview

GWM120-0075X1 Datasheet

Three phase full Bridge

No Preview Available !

www.DataSheet.co.kr
GWM 120-0075X1
Source-Drain Diode
Symbol Conditions
VSD (diode) IF = 80 A; VGS = 0 V
trr
QRM
IRM
IF = 80 A; -diF/dt = 800 A/µs
VR = 30 V; TJ = 125°C
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
0.9 1.2
V
55 ns
0.9 µC
30 A
Component
Symbol Conditions
IRMS per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
TVJ
Tstg
VISOL
FC
IISOL < 1 mA, 50/60 Hz, f = 1 minute
mounting force with clip
Maximum Ratings
300 A
-55...+175
-55...+125
1000
50 - 250
°C
°C
V~
N
Symbol Conditions
Rpin to chip
CP
Weight
with heatsink compound
coupling capacity between shorted
pins and mounting tab in the case
typ.
Characteristic Values
min. typ. max.
0.6 mW
160 pF
25 g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110407d
2-6
Datasheet pdf - http://www.DataSheet4U.net/


Part Number GWM120-0075X1
Description Three phase full Bridge
Maker IXYS Corporation
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IXYS Corporation





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