Datasheet4U Logo Datasheet4U.com

IXBH9N140G Datasheet - IXYS Corporation

Bipolar MOS Transistor

IXBH9N140G Features

* High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)

* MOS Gate turn-on - drive simplicity - MOSFET compatible for 10V turn on gate voltage

* Monolithic construction - high blocking voltage capability - very fast

IXBH9N140G Datasheet (63.27 KB)

Preview of IXBH9N140G PDF

Datasheet Details

Part number:

IXBH9N140G

Manufacturer:

IXYS Corporation

File Size:

63.27 KB

Description:

Bipolar mos transistor.
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET compatible IXBH 9N140G IXBH 9N160G VCES IC25 VCE(sat) t.

📁 Related Datasheet

IXBH9N160G Monolithic Bipolar MOS Transistor (IXYS Corporation)

IXBH10N170 Bipolar MOS Transistor (IXYS Corporation)

IXBH12N300 Bipolar MOS Transistor (IXYS)

IXBH14N300HV Bipolar MOS Transistor (IXYS)

IXBH15N140 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)

IXBH15N160 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)

IXBH16N170 BIMOSFET Monolithic Bipolar MOS Transistor (IXYS)

IXBH16N170A Bipolar MOS Transistor (IXYS Corporation)

IXBH20N300 Bipolar MOS Transistor (IXYS)

IXBH20N360HV Monolithic Bipolar MOS Transistor (IXYS)

TAGS

IXBH9N140G Bipolar MOS Transistor IXYS Corporation

Image Gallery

IXBH9N140G Datasheet Preview Page 2 IXBH9N140G Datasheet Preview Page 3

IXBH9N140G Distributor