* High Voltage Package - Replaces High Voltage Darlingtons and Series Connected MOSFETs - Lower Effective RDSON
* MOS Gate turn-on - Drive Simplicity - MOSFET Compatible for 10V turn on Gate Voltage
* Monolithic construction - High Blocking Voltage Capability - Very Fast turn-off Charact
IXBH9N160G Datasheet (177.33 KB)
IXBH9N160G
IXYS Corporation
177.33 KB
Monolithic bipolar mos transistor.
High Voltage BiMOSFETTM IXBH9N160G Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET Transistor VCES = 1600V IC25 = 9A VCE(sat) .
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