* z z z z Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications z 30120/7.527 N/lb 10 g z z z Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise
IXFB38N100Q2 Datasheet (153.89 KB)
IXFB38N100Q2
IXYS Corporation
153.89 KB
Power mosfet.
www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFB38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr .
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