Datasheet4U Logo Datasheet4U.com

IXFB38N100Q2 - Power MOSFET

Features

  • z z z z Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFB150N65X2 Power MOSFET IXYS
IXFB44N100P Power MOSFET Littelfuse
IXFB44N100P N-Channel Power MOSFET IXYS
IXFB70N100X Power MOSFET IXYS
IXFB72N55Q2 Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFB300N10P Polar Power MOSFET HiPerFET
IXFB30N120P Polar HiPerFET Power MOSFET
IXFB100N50P Power MOSFET
IXFB100N50Q3 HiperFET Power MOSFET Q3-Class
IXFB110N60P3 Power MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFB38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 1000 V ID25 = 38 A RDS(on)= 0.25 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Fc Weight 1.6 mm (0.063 in.) from case for 10 s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 38 152 38 60 5.0 20 890 -55 ... +150 150 -55 ...
Published: |