IXFB80N50Q2 mosfet equivalent, power mosfet.
Double metal process for low gate resistance
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrin.
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Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 3.
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