Datasheet Summary
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Advance Technical Information
HiPerFET TM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXFB 80N50Q2
= V DSS ID25 = RDS(on)= ≤ trr
500 V 80 A 55 mΩ 250 ns
PLUS 264TM (IXFB) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 80 320 80 60 5.0 20 890 -55 ... +150 150 -55 ... +150...