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IXFB82N60Q3 - Power MOSFET

Features

  • Low Intrinsic Gate Resistance.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier.
  • Low R and Q DS(on) G Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5.
  • ID25, Note 1 Characteristic Values Min. Typ. Max. 600 V 3.5.

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Datasheet Details

Part number IXFB82N60Q3
Manufacturer IXYS
File Size 658.31 KB
Description Power MOSFET
Datasheet download datasheet IXFB82N60Q3 Datasheet
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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFB82N60Q3 D G S VDSS = ID25 =  RDS(on) trr  600V 82A 75m 300ns PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 V 600 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 82 240 82 4 50 1560 -55 ... +150 150 -55 ... +150 A A A J V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force 30..120/6.7..27 N/lb.
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