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IXFB82N60Q3 - Power MOSFET

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IXYS Corporation

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IXFB82N60Q3 Power MOSFET by IXYS Corporation - Datasheet Preview — Datasheet preview – IXFB82N60Q3

Datasheet Details

Part number	IXFB82N60Q3
Manufacturer	IXYS Corporation
File Size	658.31 KB
Description	Power MOSFET
Datasheet	IXFB82N60Q3 Datasheet
Additional preview pages of the IXFB82N60Q3 datasheet.

Product details

Features

Low Intrinsic Gate Resistance.
Low Package Inductance.
Fast Intrinsic Rectifier.
Low R and Q DS(on) G Advantages.
High Power Density.
Easy to Mount.
Space Savings Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5.
ID25, Note 1 Characteristic Values Min. Typ. Max. 600 V 3.5.

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Published: Feb 22, 2012 |