IXFB80N50Q2
IXFB80N50Q2 is Power MOSFET manufactured by IXYS.
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Advance Technical Information
Hi Per FET TM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High d V/dt, Low trr
IXFB 80N50Q2
= V DSS ID25 = RDS(on)= ≤ trr
500 V 80 A 55 mΩ 250 ns
PLUS 264TM (IXFB) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 80 320 80 60 5.0 20 890 -55 ... +150 150 -55 ... +150 300 V V V V A A A m J J V/ns W °C °C °C °C
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
Double metal process for low gate resistance
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic rectifier
- Applications
- -
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 3.0 V
DC-DC converters Switched-mode and resonant-mode power supplies, >500k Hz switching
- DC choppers
- Pulse generation
- Laser drivers Advantages
- VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1m A VDS = VGS, ID = 8m A VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5
- ID25 Note 1 TJ = 25°C TJ =...
