IXFB82N60P Datasheet | IXYS

Polar HVTM Hi Per FET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB 82N60P VDSS = 600 V ID25 = 82 A RDS(on) ≤ 75 mΩ ≤ 200 ns trr Symbol VDSS VDGR VGSS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 600 600 ±30 ±40 82 75 200 82 100 5 20 1250 -55 ... +150 150 -55 ... +150 V V V V A A A A m J J V/ns W °C °C °C °C °C N/lb g PLUS264TM (IXFB) (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting force 300 260 30..120/7 2.7 10 Advantages z z z Plus 264TM package for clip or spring Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 m A VDS = VGS, ID = 8 m A VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±200 25 2000 75 V V n A μA μA mΩ VGS = 10 V, ID = 0.5 ID25, Note 1 ..net © 2006 IXYS All rights reserved DS99530E(08/06) IXFB 82N60P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 50 80 23 VGS = 0 V, VDS = 25 V, f = 1 MHz 1490 200 28 VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 RG = 1 Ω (External) 23 79 24 240 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 96 67 S n F p F p F ns ns ns ns n C n C n C 0.10 ° C/W 0.13 ° C/W PLUS264TM (IXFB) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CS VDS = 20 V; ID = 0.5 ID25, Note 1 Source-Drain Diode Symbol IS ISM VSD trr...